Skip to content Skip to footer

eGaN® FET Drivers and Layout Considerations

When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop.
eGaN FETs differ from their silicon counterparts because of their significantly faster switching speeds and consequently have different requirements for gate drive, layout, and thermal management which can all be interactive.
Download this whitepaper to learn more.

Read More

By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.

By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com

Related Categories: , , ,

digital route logo
Published: September 7, 2021 Lang: ENG
Type: Whitepaper Length: 7 pages

More resources from Efficient Power Conversion Corporation (EPC)