eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the similarities and differences between these two technologies is a necessary foundation for understanding how much we can improve existing power conversion systems.
Every semiconductor has a limit to its capabilities. These limits are typically expressed prominently in a device data sheet and serve as a guide to designers as to how to create designs that do not have hidden quality or reliability issues.
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