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Toggle and Spin-Torque MRAM: Status and Outlook

Published by: Everspin Technologies

Everspin Technologies review the development of MRAM technology at Everspin, focusing on both toggle MRAM, which is used in our current commercial products, and spin-torque MRAM, which offers significant potential for cell size reduction that could enable higher memory densities.
Toggle MRAM uses magnetic fields for programming the bits with a particular free layer structure, bit orientation, and write pulse sequence to avoid the half-select disturbs present in other field-writing techniques.
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Published: April 6, 2020 Lang: ENG
Type: Whitepaper Length: 6 pages

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