Skip to content Skip to footer

eGaN® FET Small Signal RF Performance

Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. The smallest 200 V eGaN FET, EPC2012, was selected for RF evaluation and should be viewed as a starting point from which the RF characteristics of future eGaN FET part numbers can be optimized for even better RF performance at higher frequencies.
This paper focuses on RF characterization in the frequency range from 200 MHz through 2.5 GHz.

Read More

By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.

By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email

Related Categories: , , , ,

digital route logo
Published: January 16, 2021 Lang: ENG
Type: Whitepaper Length: 5 pages

More resources from Efficient Power Conversion Corporation (EPC)