Selecting eGaN® FET Optimal On-Resistance
Previously published articles showed that eGaN FETs behave for the most part just like silicon devices and can be evaluated using similar performance metrics.
In this white paper the die size optimization process for selecting the eGaN FET optimal on-resistance is discussed and an example application is used to show specific results. Since ‘optimum' means different things to different people, this process is aimed at maximizing switching device efficiency at a given load condition.
Download to find out more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Components, Power
More resources from Efficient Power Conversion Corporation (EPC)
Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gal...
eGaN® FETs for Envelope Tracking
Gallium nitride transistors can be used to improve the efficiency of DC-DC conversion.
In this white paper we look at a new application that ...
eGaN® FETs in High Frequency Resonant Converters
In this white paper eGaN FET technology is applied in a high frequency resonant converter. Previously, the advantages provided by eGaN FETs in hard...