Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and circuit topologies paced the growing need for electrical power in our daily lives. In the new millennium, however, the rate of improvement slowed as the silicon power MOSFET asymptotically approached its theoretical bounds.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Power, Power semiconductors, Semiconductors
More resources from Efficient Power Conversion Corporation (EPC)
Selecting eGaN® FET Optimal On-Resistance
Previously published articles showed that eGaN FETs behave for the most part just like silicon devices and can be evaluated using similar performan...
eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the sim...
eGaN® FETs and ICs for 48 V-12 V Regulated Brick Converters
Unregulated performance in a regulated design delivers unprecedented power density.
Low QOSS, zero QRR and low QGD, along with low inductance...
