eGaN® FETs in High Frequency Resonant Converters
In this white paper eGaN FET technology is applied in a high frequency resonant converter. Previously, the advantages provided by eGaN FETs in hard switching isolated and non-isolated applications were addressed.
This paper will demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, as compared to what is achievable with existing power MOSFET devices. An isolated high frequency 48 V intermediate bus converter (IBC) with a 12 V output utilizing a resonant topology operating above 1 MHz is presented.
Download to find out more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Capacitors, Communication, Distributed power, Power, Processors, Switches, Transformers
More resources from Efficient Power Conversion Corporation (EPC)
eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the sim...
eGaN® FET Small Signal RF Performance
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. The smallest 200 V eGaN ...
eGaN® FETs in Wireless Power Transfer Systems
The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charg...
